基本信息:
- 专利标题： 나노전자 소자 및 회로
- 专利标题（英）：Nanoelectronic devices and circuits
- 专利标题（中）：纳米电子器件和电路
- 申请号：KR1020037013565 申请日：2002-04-18
- 公开(公告)号：KR1020040012755A 公开(公告)日：2004-02-11
- 发明人： 송아이민 , 옴링페르
- 申请人： 05844169 리미티드
- 申请人地址： ** Greek Street, Stockport, Cheshire, SK* *AX, United Kingdom
- 专利权人： 05844169 리미티드
- 当前专利权人： 05844169 리미티드
- 当前专利权人地址： ** Greek Street, Stockport, Cheshire, SK* *AX, United Kingdom
- 代理人： 특허법인(유)화우
- 优先权： GB01097823 2001-04-20
- 国际申请： PCT/GB2002/001807 2002-04-18
- 国际公布： WO2002086973 2002-10-31
- 主分类号： H01L29/861
- IPC分类号： H01L29/861 ; B82Y40/00
Excellent and the conductive substrate to form a charge carrier flow path between the pre-set line formed of the elongated channel 20 has a width of the diode elements are at least the following lengths and 100㎚ 100㎚ nanometer size has a property capable It comprises an insulated line (8, 16, 18) in the etching. Of the diode current-voltage characteristics by a conventional diode and similar, the threshold voltage and current levels (0V number to bolt in) (in ㎁ to ㎂) both modifications to the geometry of the simple device, 10 times the size of the It can be adjusted to up. Standard silicon wafers may be used as a substrate. All collection of logic gates, such as OR, AND, NOT can be configured only by a simple etching grooves in the substrate.
公开/授权文献:
- KR100884040B1 나노전자 소자 및 회로 公开/授权日：2009-02-19