基本信息:
- 专利标题： 필드 에미터 및 그 제조방법
- 专利标题（英）：Field emitter and method for manufacturing the same
- 专利标题（中）：现场发射器及其制造方法
- 申请号：KR1019980054873 申请日：1998-12-14
- 公开(公告)号：KR1020000039520A 公开(公告)日：2000-07-05
- 发明人： 한인택 , 이내성 , 최원봉
- 申请人： 삼성에스디아이 주식회사
- 申请人地址： 경기도 용인시 기흥구 공세로 ***-** (공세동)
- 专利权人： 삼성에스디아이 주식회사
- 当前专利权人： 삼성에스디아이 주식회사
- 当前专利权人地址： 경기도 용인시 기흥구 공세로 ***-** (공세동)
- 代理人： 리앤목특허법인; 권석흠
- 主分类号： H01J9/02
- IPC分类号： H01J9/02 ; H01J1/304
摘要：
PURPOSE: A method for manufacturing a field emitter is provided to increase the amount of the discharged electrons by increasing the amount of the current with respect to the tip. CONSTITUTION: A cathode layer, an insulating layer, and a gate layer are sequentially deposited on a glass substrate. A gate having an opening of a predetermined diameter is formed by etching the gate layer. A hole which correspond to the opening is formed in the insulating layer by etching. A dividing layer is formed by the electric beam depositing method. A single tip is formed by sequentially depositing a first depositing layer, a second depositing layer, and a third depositing layer. Portions of the first, second, and third depositing layers are removed by etching the divided layer.
摘要（中）：
目的：提供一种用于制造场发射器的方法，通过增加电流相对于尖端的量来增加放电电子的量。 构成：阴极层，绝缘层和栅极层依次沉积在玻璃基板上。 通过蚀刻栅极层形成具有预定直径的开口的栅极。 通过蚀刻在绝缘层中形成与开口对应的孔。 通过电子束沉积法形成分隔层。 通过依次沉积第一沉积层，第二沉积层和第三沉积层形成单个尖端。 通过蚀刻分割层来去除第一，第二和第三沉积层的一部分。
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01J | 放电管或放电灯 |
| ------H01J9/00 | 专用于制造放电管、放电灯及其部件的设备和方法；从放电管或灯回收材料 |
| --------H01J9/02 | .电极或电极系统的制造 |