The invention also inhibit, in particular, a gate line formed after the conventional halo ion conducting injection and hameuroseo forming El Didier then extending the thickness of the gate side wall to form a thin film again short channel effect related to a method for manufacturing a semiconductor device as well as El Didier relates to an ion implantation and source / drain ion implantation during channeling effect (channeling effect) to form a double self H. L. Didier (double self HLDD) transistor to prevent way. And a method of manufacturing a semiconductor device of the present invention comprises the steps of forming a gate pattern formed of the gate insulating film / gate / cap insulating layer on the predetermined area on the first conductive type semiconductor substrate having isolated the active region and a field region, a gate bottom edge portion on the substrate a first conductivity type impurity first ionic forming step, a front low concentration in the second conductivity type impurity ions in step and, the substrate to form a first insulating film on a surface and a side surface of the exposed substrate surface and the gate pattern injecting and, further comprising: a surface of the insulating film formed on the gate pattern side forming the gate side walls made of a second insulating film, further comprising: a second conductivity type impurity ions are implanted at a high concentration on the whole surface of the substrate, and the step of diffusing the impurity ions It comprise.