The invention The present invention relates to semiconductor memory devices, and in particular to improve the speed of a semiconductor memory device in a low voltage, high voltage relates to a data output buffer to compensate for noise. The data output buffer of the present invention for this end, and the first signal output by the logical product operation, and inverting the data signal and a data enable signal, by calculating a logical OR a block signal and a data signal to the inverted data of the inverting and outputting a second signal the input buffer unit; The first, second and control signals to the high control signal and a row control signal the first and second pull-up signal and the first and second input and output control unit for outputting a second pull-down signal output from the input buffer unit; And the first and second pull-up signal and the first and characterized by including an output adapted to finally output the data by the second pull-down signal output from the input and output control unit.