基本信息:
- 专利标题： 기판건조장치및기판건조방법
- 专利标题（英）：A substrate drying apparatus and a substrate drying method
- 专利标题（中）：的基板干燥装置及基板干燥方法
- 申请号：KR1019940028107 申请日：1994-10-29
- 公开(公告)号：KR1019950012610A 公开(公告)日：1995-05-16
- 发明人： 다나카히로시 , 모쿠오쇼리 , 요코미조겐지 , 미나미데루오미
- 申请人： 도쿄엘렉트론가부시키가이샤 , 도오교오에레구토론큐우슈우가부시끼가이샤
- 申请人地址： *-* Akasaka *-chome, Minato-ku, Tokyo, Japan
- 专利权人： 도쿄엘렉트론가부시키가이샤,도오교오에레구토론큐우슈우가부시끼가이샤
- 当前专利权人： 도쿄엘렉트론가부시키가이샤,도오교오에레구토론큐우슈우가부시끼가이샤
- 当前专利权人地址： *-* Akasaka *-chome, Minato-ku, Tokyo, Japan
- 代理人： 강일우; 강동수; 홍기천
- 优先权： JP93-294333 1993-10-29; JP94-16979 1994-01-17; JP94-40396 1994-02-15; JP94-221161 1994-08-23
- 主分类号： H01L21/304
- IPC分类号： H01L21/304
The present invention installed in the bottom of the handle has a liquid-receiving yeokyeok, having a heating means for vaporizing the treatment liquid treatment tank and, subject to be treated body receiving area for receiving a treatment solution of the subject receiving region and volatility for receiving the object to be processed and, attached to the container, and a container receiving the water removal from the object to be processed by using the vaporized the treatment liquid, a liquid discharge pipe for discharging the water from the container to an external treatment tank and the treatment tank workpiece receiving area and is provided on the top, provided with a cooling means for condensing the vaporized processing liquid, the liquid discharge pipe have a closing valve, and the substrate drying apparatus having a tube branched from the exhaust pipe at a position accessible to the container than that of the on-off valve to provide.
公开/授权文献:
- KR100338534B1 기판건조장치및기판건조방법 公开/授权日：2002-09-27
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/302 | .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割 |
| ------------------H01L21/304 | ......机械处理，例如研磨、抛光、切割 |