KR790000937B1 SEMICONDUCTOR MEMORY OPPARATUS WITH MULTILAYER INSULATOR CONTACTING THE SEMICON DUCTOR
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基本信息:
- 专利标题： SEMICONDUCTOR MEMORY OPPARATUS WITH MULTILAYER INSULATOR CONTACTING THE SEMICON DUCTOR
- 申请号：KR740001643 申请日：1974-02-26
- 公开(公告)号：KR790000937B1 公开(公告)日：1979-07-31
- 发明人： DEVID MCELROY BOULIN , RAYMOND J , DAWON KABNG
- 申请人： WESTERN ELECTRIC CO
- 专利权人： WESTERN ELECTRIC CO
- 当前专利权人： WESTERN ELECTRIC CO
- 优先权： KR740001643 1974-02-26
摘要：
A memory element structure for a computer, was composed of 1st insulator(12) contacted with the semiconductor(11) surface, and 2nd insulator(13) combined to form joint regions(12.5) with the 1st insulator. The surface metallic impurity concentration of 1 x 1014 to 2 x 1015 no. of atom/cm2 was distributed to the joint regions so that electron charges remained in the joint regions.