基本信息:
- 专利标题： 반도체 디바이스의 제조방법
- 专利标题（英）：KR101929605B1 - Method for manufacturing semiconductor device
- 申请号：KR1020137035092 申请日：2012-11-28
- 公开(公告)号：KR101929605B1 公开(公告)日：2018-12-14
- 发明人： 우,히시아오시아 , 팡,스린 , 로,트세황 , 첸,젱페이 , 장,슈 , 헤,얀치앙
- 申请人： 씨에스엠씨 테크놀로지스 에프에이비1 코., 엘티디.
- 申请人地址： No. * Xinzhou Road, Wuxi New District, Jiangsu ******, P. R. China
- 专利权人： 씨에스엠씨 테크놀로지스 에프에이비1 코., 엘티디.
- 当前专利权人： 씨에스엠씨 테크놀로지스 에프에이비1 코., 엘티디.
- 当前专利权人地址： No. * Xinzhou Road, Wuxi New District, Jiangsu ******, P. R. China
- 代理人： 특허법인 무한
- 优先权： CN201110451716X 2011-12-29
- 国际申请： PCT/CN2012/085396 2012-11-28
- 国际公布： WO2013097573 2013-07-04
- 主分类号： H01L21/82
- IPC分类号： H01L21/82 ; H01L27/085
The present invention relates to a technical field of semiconductor manufacturing. A method for manufacturing a semiconductor device, and the silicon on the edges of the oxide layer in the LDMOS easy to drift region, indicates that to solve the problems of the prior art which results in a failure of the LDMOS device. Providing a semiconductor substrate including an LDMOS region and a CMOS region;: wherein the method comprises the following Forming a sacrificial oxide layer (sacrificial oxide layer) on the semiconductor substrate; Removing the sacrificial oxide layer; After the sacrificial oxidation process to form a masking layer on the semiconductor substrate; Using the masking layer as a mask to form a drift region LDMOS; Forming a drift region, an oxide layer over the drift region; And removing the masking layer. The embodiment of the present invention can be applied to a BCD process.
公开/授权文献:
- KR1020140121339A 반도체 디바이스의 제조방법 公开/授权日：2014-10-15
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/67 | .专门适用于在制造或处理过程中处理半导体或电固体器件的装置；专门适合于在半导体或电固体器件或部件的制造或处理过程中处理晶片的装置 |
| ----------H01L21/71 | ..限定在组H01L21/70中的器件的特殊部件的制造 |
| ------------H01L21/78 | ...把衬底连续地分成多个独立的器件 |
| --------------H01L21/82 | ....制造器件，例如每一个由许多元件组成的集成电路 |