基本信息:
- 专利标题： 반도체 발광소자
- 专利标题（英）：KR101928328B1 - Semiconductor light emitting device
- 申请号：KR1020120081788 申请日：2012-07-26
- 公开(公告)号：KR101928328B1 公开(公告)日：2018-12-12
- 发明人： 안상정
- 申请人： 안상정
- 申请人地址： 인천광역시 연수구 아트센터대로**번길 **, ****호 ****호 (송도동, 송도더샵하버뷰* **단지)
- 专利权人： 안상정
- 当前专利权人： 안상정
- 当前专利权人地址： 인천광역시 연수구 아트센터대로**번길 **, ****호 ****호 (송도동, 송도더샵하버뷰* **단지)
- 主分类号： H01L33/36
- IPC分类号： H01L33/36 ; H01L33/62
According to the disclosure, in the semiconductor light emitting element, and a second surface facing the first surface and the first surface, a first electrical pathway from the second surface leads to a first side (electrical pass) and the second electrical pathway a support substrate (supporting substrate) having; The at least two semiconductor stacked body formed on the surface 1; as, respectively, (a first semiconductor stacked body and the conjunction semiconductor laminated chera) is by using a growth substrate and growing sequentially, with a plurality of semiconductor layers, at least two semiconductor laminate; Sikimyeo bonded to the second side first surface of the supporting substrate side of the semiconductor layer a plurality of semiconductor layer, the first bonding layer and electrically connected to the electrical path (Bonded layer); And, the first semiconductor laminate a second first electrical pathway and a second electrical connection connecting the at least one electrical path of the semiconductor layered product in a second surface side; relates to a semiconductor light-emitting device comprising the .
公开/授权文献:
- KR1020140013691A 반도체 발광소자 公开/授权日：2014-02-05