基本信息:
- 专利标题： 화학 센서 응용을 위한 박막 트랜지스터
- 专利标题（英）：KR101921695B1 - Thin-film transistors for chemical sensor applications
- 申请号：KR1020120109667 申请日：2012-10-02
- 公开(公告)号：KR101921695B1 公开(公告)日：2018-11-23
- 发明人： 우일리앙 , 리우핑 , 위글스워스안소니
- 申请人： 삼성전자주식회사
- 申请人地址： ***, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea
- 专利权人： 삼성전자주식회사
- 当前专利权人： 삼성전자주식회사
- 当前专利权人地址： ***, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea
- 代理人： 팬코리아특허법인
- 优先权： US13/252,332 2011-10-04
- 主分类号： G01N27/30
- IPC分类号： G01N27/30 ; G01N27/414
The chemical sensor is disclosed. In certain embodiments, the chemical sensor is an electronic device comprising a first transistor and a second transistor. And wherein the first transistor comprises a semi-conductive layer formed of a first semiconductor and a carbon nanotube. The second transistor comprises a semi-conductive layer formed of a second semiconductor, the second transistor does not comprise a carbon nanotube. The two transistors, and the response to the compound, respectively different and because of this different reaction may be used to identify a particular compound. The chemical sensor may be advantageously used with a disposable sensor for identifying the explosive compound such as trinitrotoluene (TNT). The electronic device may be used with the analyzer for processing information such as the response generated by the electronic device.
公开/授权文献:
- KR1020130036719A 화학 센서 응용을 위한 박막 트랜지스터 公开/授权日：2013-04-12
信息查询:
EspacenetIPC结构图谱:
| G | 物理 |
| --G01 | 测量；测试 |
| ----G01N | 借助于测定材料的化学或物理性质来测试或分析材料 |
| ------G01N27/00 | 用电、电化学或磁的方法测试或分析材料 |
| --------G01N27/02 | .通过测试阻抗 |
| ----------G01N27/28 | ..电解池部件 |
| ------------G01N27/30 | ...电极，例如测试电极；半电池 |