基本信息:
- 专利标题： 그래핀 전사 방법 및 이를 이용한 소자의 제조방법
- 专利标题（英）：KR101920720B1 - Method of transferring graphene and method of manufacturing device using the same
- 申请号：KR1020120155320 申请日：2012-12-27
- 公开(公告)号：KR101920720B1 公开(公告)日：2018-11-21
- 发明人： 최재영 , 이재현 , 황동목
- 申请人： 삼성전자주식회사 , 성균관대학교산학협력단
- 申请人地址： ***, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea
- 专利权人： 삼성전자주식회사,성균관대학교산학협력단
- 当前专利权人： 삼성전자주식회사,성균관대학교산학협력단
- 当前专利权人地址： ***, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea
- 代理人： 리앤목특허법인
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/78
So there is disclosed about the pin transfer method and a method of manufacturing a device using the same. Disclosed graphene transfer method is non-metal catalyst to form a yes pinning layer on a substrate including a (e. G., Catalyst), the yes yes from said step and said substrate to form a thin film on the pinned layer pinned layer and the stacked structure of the thin film a may include the step of separating. The non-metal catalyst (e.g., catalyst) may include at least one of Ge and SiGe. The thin film may be an inorganic thin film can be formed in a single layer or multi-layer structure. Separating the laminated structure from the substrate may be carried out by a physical separation process. Before separating the multilayer structure from the substrate, it may further perform the step of forming an organic film on the film.
公开/授权文献:
- KR1020140085113A 그래핀 전사 방법 및 이를 이용한 소자의 제조방법 公开/授权日：2014-07-07
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/335 | .....场效应晶体管 |
| ------------------H01L21/336 | ......带有绝缘栅的 |