基本信息:
- 专利标题： 고전압 애플리케이션을 위한 다중 필드-완화 트렌치를 구비한 종단 구조체를 갖는 트렌치 MOS 디바이스
- 专利标题（英）：KR101907175B1 - Trench mos device having a termination structure with multiple field-relaxation trenches for high voltage applications
- 申请号：KR1020167021475 申请日：2014-11-10
- 公开(公告)号：KR101907175B1 公开(公告)日：2018-10-11
- 发明人： 린,이-유 , 창,춘-추에 , 쿵,푸,주
- 申请人： 비샤이 제너럴 세미컨덕터 엘엘씨
- 申请人地址： *** Motor Parkway, Hauppauge, NY *****, U.S.A.
- 专利权人： 비샤이 제너럴 세미컨덕터 엘엘씨
- 当前专利权人： 비샤이 제너럴 세미컨덕터 엘엘씨
- 当前专利权人地址： *** Motor Parkway, Hauppauge, NY *****, U.S.A.
- 代理人： 김남식; 이인행
- 优先权： US14/152,564 2014-01-10
- 国际申请： PCT/US2014/064790 2014-11-10
- 国际公布： WO2015105573 2015-07-16
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/40 ; H01L29/66 ; H01L29/872
Termination for a semiconductor device structure comprises a semiconductor substrate having an active region and a termination region. More than one cell trench extends from the boundary of the active region is located within the end region towards the corner of the semiconductor substrate. Termination trench is formed in the end region on the side of the cell away from the active region away from the trench. The conductive spacer is positioned adjacent the side wall of the termination trench near the trench cells. A first oxide layer is formed in the longitudinal side walls of the trench in contact with the conductive spacer. The first conductive layer is formed on the back side surface of the semiconductor substrate. A second conductive layer is formed over the active region and a termination region.