Method of manufacturing a semiconductor device, comprising the steps of: the difference between the lattice constant as compared to the first substrate, and germanium (Ge) forming a sacrificial layer made of a predetermined threshold value or less material; Forming a germanium (Ge) layer on the sacrificial layer; Comprising the steps of: forming an insulating layer on the second substrate; The step of bonding the germanium (Ge) layer on the insulating layer; And wherein the germanium (Ge) layer and a step of removing the sacrificial layer and the first substrate in the bonded state in the insulating layer, by etching the sacrificial layer. According to the production process of the semiconductor device, the epitaxial lift-off (Epitaxial Lift-Off; ELO) insulator germanium with different surface orientation, by techniques titanium (Germanium-on-Insulator; GeOI) may form a structure, the sacrificial deformation (strain) on germanium (Ge) layer, using the lattice constant of the layer can be so applied. In addition, when the manufacturing method of the semiconductor element germanium (Ge) does not require the lower the surface roughness of the layers additional polishing (polishing) process, germanium (Ge) of less than or equal to the number to several tens of nm to the thickness of the layer can be produced in a thin thickness, a substrate used for growing the sacrificial layer can be re-used separately.