The present invention includes the steps of forming a pixel region, a thin-film transistor in the pixel regions defined on the substrate; Comprising the steps of: forming a first passivation layer over the thin film transistor; Forming a common electrode over the first passivation layer; Forming a second protective layer over said common electrode; Forming a secondary insulation layer of a first thickness over the second passivation layer; Forming a second photoresist pattern of a third thickness thinner than the first photoresist pattern having a second thickness over the sub-insulation layer and the second thickness; A step of etching the first and second of the sub-exposure of a photoresist pattern outside the insulating layer and the lower portion of the second and the first protective layer in order to form a drain contact hole that exposes a drain electrode of the thin film transistor and .; Proceeds to ashing by removing the second photoresist pattern, and exposing the secondary insulating layer; By removing the auxiliary insulating layer proceeds to dry etching which is located outside the first photoresist to form a pattern having isolated the first undercut form one exposes the protective layer on the bottom of the first photoresist and; Forming a transparent conductive material layer on the front onto the first photoresist pattern having a thinner thickness than the fourth of the first thickness and; Fringe forming a pixel electrode to a portion of the insulating pattern formed by apertures in each pixel region by proceeding to the first photoresist pattern and its upper lift-off to remove the transparent conductive material layer at the same time, which is located It provides a field mode switching method of an array substrate for a liquid crystal display device and an array substrate for a fringe field switching mode liquid crystal display device manufactured thereby.