基本信息:
- 专利标题： 반도체 장치 및 반도체 소자 보호용 재료
- 专利标题（英）：KR101864096B1 - A semiconductor device and semiconductor device protecting materials
- 申请号：KR1020177023796 申请日：2016-08-16
- 公开(公告)号：KR101864096B1 公开(公告)日：2018-06-01
- 发明人： 니시무라,다까시 , 마에나까,히로시 , 나까무라,시게루 , 아오야마,다꾸지 , 고바야시,유우스께
- 申请人： 세키스이가가쿠 고교가부시키가이샤
- 申请人地址： *-*, Nishitemma *-chome, Kita-ku, Osaka-shi, Osakafu, Japan
- 专利权人： 세키스이가가쿠 고교가부시키가이샤
- 当前专利权人： 세키스이가가쿠 고교가부시키가이샤
- 当前专利权人地址： *-*, Nishitemma *-chome, Kita-ku, Osaka-shi, Osakafu, Japan
- 代理人： 장수길; 박보현
- 优先权： JPJP-P-2015-160674 2015-08-17
- 国际申请： PCT/JP2016/073934 2016-08-16
- 国际公布： WO2017030126 2017-02-23
- 主分类号： H01L23/29
- IPC分类号： H01L23/29 ; H01L23/31 ; C08G59/18 ; C08K3/00 ; C08L63/00
The cured product was excellent in heat dissipation properties, the cured product is less void, and the cured product excellent in insulation reliability, and provides a semiconductor device which can satisfactorily protect the semiconductor element. The semiconductor device according to the present invention, a semiconductor element, a semiconductor element protective material for comprising the cured product disposed on the first surface of the semiconductor element, to obtain the cured product, the heat-curable compound, a curing agent or curing catalyst, and , a thermal conductivity of 10W / m · K or more include an inorganic filler, and does not include the cyclic siloxane compound of from trimer body to ten weight compound, or a cyclic siloxane compound of from trimer body to ten dimer to less than 500ppm, and wherein the diameter and wherein the content of the inorganic filler in the cargo below 60% by weight or more to 92 wt%, and the curing of the water electric conductivity of 50μS / cm or less.
公开/授权文献:
- KR1020180013842A 반도체 장치 및 반도체 소자 보호용 재료 公开/授权日：2018-02-07
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L23/00 | 半导体或其他固态器件的零部件 |
| --------H01L23/02 | .容器；封接 |
| ----------H01L23/29 | ..按材料特点进行区分的 |