基本信息:
- 专利标题： 실리콘 기판 직접 접합 방법, 그 장치, 및 실리콘 기판 직접 접합 장치의 정렬부 검증 방법
- 专利标题（英）：KR101854880B1 - Silicon substrate direct bonding method and apparatus system thereof, silicon substrate direct bonding apparatus align parts verification method
- 申请号：KR1020160080958 申请日：2016-06-28
- 公开(公告)号：KR101854880B1 公开(公告)日：2018-05-04
- 发明人： 신홍수 , 도현정 , 최윤성
- 申请人： 주식회사 휴템
- 申请人地址： 경기도 평택시 서탄면 방꼬지길 ***
- 专利权人： 주식회사 휴템
- 当前专利权人： 주식회사 휴템
- 当前专利权人地址： 경기도 평택시 서탄면 방꼬지길 ***
- 代理人： 팬코리아특허법인
- 主分类号： H01L21/18
- IPC分类号： H01L21/18 ; H01L21/67 ; H01L21/683 ; H01L21/60 ; H01L23/544 ; H01L21/66 ; H01L21/68
The present invention is to provide a silicon substrate directly bonding method for bonding a uniform contact of the silicon substrate. A silicon substrate directly bonding method according to the aspect of the invention, the loading of the underlying silicon substrate to a flat vacuum chuck of the lower stage and the upper silicon substrate having a flexibility in a downward convex curved surface vacuum chuck of the upper stage face on the lower stage a first step of loading, by raising the lower stage of separating the second stage, the silicon substrate into contact with the lower silicon substrate, from a point (e.g., center) of the upper silicon substrate from the downwardly convex surface vacuum chuck a third step, and to further increase the lower stage includes a fourth step of bonding the entire surface at a point above the lower silicon substrate and the silicon substrate to the other part (e. g., outside).
公开/授权文献:
- KR1020180001890A 실리콘 기판 직접 접합 방법, 그 장치, 및 실리콘 기판 직접 접합 장치의 정렬부 검증 방법 公开/授权日：2018-01-05
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |