基本信息:
- 专利标题: 기판 상에 솔더 성막을 형성하는 방법
- 专利标题(英):KR101842730B1 - Method to form solder deposits on substrates
- 专利标题(中):在衬底上形成焊料膜的方法
- 申请号:KR1020137000262 申请日:2011-06-23
- 公开(公告)号:KR101842730B1 公开(公告)日:2018-03-27
- 发明人: 람프레히트스펜 , 마테야트카이옌스 , 에베르트잉고 , 케니스티븐
- 申请人: 아토테크더치랜드게엠베하
- 申请人地址: ERASMUSSTRASSE ** ***** BERLIN GERMANY
- 专利权人: 아토테크더치랜드게엠베하
- 当前专利权人: 아토테크더치랜드게엠베하
- 当前专利权人地址: ERASMUSSTRASSE ** ***** BERLIN GERMANY
- 代理人: 특허법인코리아나
- 优先权: EP101684686 2010-07-05
- 国际申请: PCT/EP2011/060580 2011-06-23
- 国际公布: WO2012004137 2012-01-12
- 主分类号: H01L23/488
- IPC分类号: H01L23/488 ; H01L23/498
摘要:
기판상에솔더성막을형성하는방법으로서, i) 적어도하나의내부층 콘택트영역을포함하는기판을제공하는단계, ii) 상기적어도하나의콘택트영역을포함하는전체기판영역을상기기판표면상의전도성층을제공하는데적합한용액과접촉시키는단계, iii) 패턴화된레지스트층을형성하는단계, iv) 상기내부층 콘택트영역상에주석또는주석합금을함유하는솔더성막층을전기도금하는단계, v) 패턴화된레지스트층을제거하는단계, vi) 기판표면상에솔더레지스트개구들을갖는솔더레지스트층을형성하는단계를포함하는, 그기판상에솔더성막을형성하는방법이개시된다.
摘要(中):
一种在衬底上形成焊料膜的方法,包括以下步骤:i)提供包括至少一个内层接触区的衬底; ii)在导电层上沉积包括所述至少一个接触区的整个衬底区 ,iii)形成图案化的抗蚀剂层,iv)在内层接触区域上电镀包含锡或锡合金的焊料沉积层,v) 去除暴露的抗蚀剂层;以及vi)在基板表面上形成具有阻焊剂开口的阻焊层。
摘要(英):
A method of forming a solder film formed on the substrate, i) at least one of the steps of: providing a substrate including an inner layer contact area, ii) the at least one conductive layer on the substrate surface, the entire substrate area including the contact area contacting with a suitable solution to provide, iii) forming a patterned resist layer, iv) the step of electroplating a solder film-forming layer containing a tin or tin alloy on said inner layer contact area, v) pattern removing localized resist layer, vi) a method of forming a solder film formed on, onto the substrate and forming a solder resist layer having the solder resist opening from a surface of a substrate is disclosed.
公开/授权文献:
- KR1020130084652A 기판 상에 솔더 성막을 형성하는 방법 公开/授权日:2013-07-25
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L23/00 | 半导体或其他固态器件的零部件 |
--------H01L23/34 | .冷却装置;加热装置;通风装置或温度补偿装置 |
----------H01L23/488 | ..由焊接或黏结结构组成 |