基本信息:
- 专利标题： 표면 상호 연결부 및 무전해 충진물을 포함하는 캐비티를 포함하는 패키지 기판
- 专利标题（英）：KR101831643B1 - Package substrate comprising surface interconnect and cavity comprising electroless fill
- 申请号：KR1020167027564 申请日：2015-04-09
- 公开(公告)号：KR101831643B1 公开(公告)日：2018-02-23
- 发明人： 좀마,하우쌈,와픽 , 비르,오마르,제임스 , 김,친-관
- 申请人： 퀄컴 인코포레이티드
- 申请人地址： **** Morehouse Drive, San Diego, CA *****-****, U.S.A.
- 专利权人： 퀄컴 인코포레이티드
- 当前专利权人： 퀄컴 인코포레이티드
- 当前专利权人地址： **** Morehouse Drive, San Diego, CA *****-****, U.S.A.
- 代理人： 특허법인 남앤드남
- 优先权： US14/251,486 2014-04-11
- 国际申请： PCT/US2015/025150 2015-04-09
- 国际公布： WO2015157536 2015-10-15
- 主分类号： H01L23/498
- IPC分类号： H01L23/498 ; H01L23/00 ; H05K1/11 ; H05K1/02 ; H05K3/42
Some of the novel features, the first dielectric layer, the substrate is associated with a first interconnect including a first cavity and a first electroless plating metal layer. First dielectric layer comprises a first surface and a second surface. First interconnects are on the first surface of the first dielectric layer. A first cavity penetrates a first surface of the first dielectric layer. First electroless plating metal layer is formed in the first cavity, at least in part. First electroless plating metal layer defines a second interconnects are embedded in the first dielectric layer. In some implementations, the substrate may further comprise a core layer. The core layer includes a first surface and a second surface. The first surface of the core layer is coupled to the second surface of the first dielectric layer. In some implementations, the substrate further includes a second dielectric layer.
公开/授权文献:
- KR1020160144367A 표면 상호 연결부 및 무전해 충진물을 포함하는 캐비티를 포함하는 패키지 기판 公开/授权日：2016-12-16
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L23/00 | 半导体或其他固态器件的零部件 |
| --------H01L23/34 | .冷却装置；加热装置；通风装置或温度补偿装置 |
| ----------H01L23/482 | ..由不可拆卸地施加到半导体本体上的内引线组成的 |
| ------------H01L23/498 | ...引线位于绝缘衬底上的 |