基本信息:
- 专利标题： 열가교촉진제, 이것을 함유하는 폴리실록산 함유 레지스트 하층막 형성용 조성물 및 이것을 이용한 패턴 형성 방법
- 专利标题（英）：KR101825254B1 - Thermal crosslinking accelerator, polysiloxane-containing resist underlayer film forming composition containing same, and patterning process using same
- 专利标题（中）：热交联促进剂，含有聚硅氧烷抗蚀剂的下层膜形成用组合物及使用其的图案形成方法
- 申请号：KR1020140005927 申请日：2014-01-17
- 公开(公告)号：KR101825254B1 公开(公告)日：2018-03-14
- 发明人： 오기하라츠토무 , 비야지마유스케 , 우라노히로유키
- 申请人： 신에쓰 가가꾸 고교 가부시끼가이샤
- 申请人地址： 일본 도꾜도 지요다꾸 오떼마치 *쪼메 *방 *고
- 专利权人： 신에쓰 가가꾸 고교 가부시끼가이샤
- 当前专利权人： 신에쓰 가가꾸 고교 가부시끼가이샤
- 当前专利权人地址： 일본 도꾜도 지요다꾸 오떼마치 *쪼메 *방 *고
- 代理人： 김진회
- 优先权： JPJP-P-2013-010814 2013-01-24
- 主分类号： C08K5/55
- IPC分类号： C08K5/55 ; C08L83/04 ; G03F7/004 ; G03F7/20 ; C08K5/00
[Problem] The present invention is to improve the etch selectivity of the upper layer resist, there is provided a thermal crosslinking accelerator to improve the pattern profile after etching also in the finer patterns than in the case using the lower resist film containing conventional silicon.
[MEANS FOR SOLVING PROBLEMS] As a thermal crosslinking accelerator for the polysiloxane compound,
To thermal crosslinking accelerator for the polysiloxane compound, characterized in that represented by formula (A-1).
(R 11, R 12, R 13, R 14 are independently a hydrogen atom, a halogen atom, a straight chain, branched or cyclic alkyl group of 1 to 20 carbon atoms, a substituted or unsubstituted aryl group of 6 to 20 carbon atoms, or carbon atoms, represents an aralkyl group, such as 7 to 20, may be substituted with a group, even if a part or all of the hydrogen atoms of the alkoxy group thereof. a, b, c, d is an integer of 0~5. a, b, c, d are 2 is not less
than, R 11, R 12, R 13, R
14 may be the form a cyclic structure. L is a lithium, etc.)
公开/授权文献:
信息查询:
EspacenetIPC结构图谱:
| C | 化学；冶金 |
| --C08 | 有机高分子化合物；其制备或化学加工；以其为基料的组合物 |
| ----C08K | 使用无机物或非高分子有机物作为配料 |
| ------C08K5/00 | 使用有机配料 |
| --------C08K5/55 | .含硼化合物 |