基本信息:
- 专利标题： 실리콘 웨이퍼의 연마 방법
- 专利标题（英）：Method for polishing silicon wafer
- 申请号：KR1020177005264 申请日：2015-05-13
- 公开(公告)号：KR101815502B1 公开(公告)日：2018-01-05
- 发明人： 고자사카즈아키 , 스기모리카츠히사 , 고부치슌야
- 申请人： 가부시키가이샤 사무코
- 申请人地址： *-*, Shibaura *-chome, Minato-ku, Tokyo, Japan
- 专利权人： 가부시키가이샤 사무코
- 当前专利权人： 가부시키가이샤 사무코
- 当前专利权人地址： *-*, Shibaura *-chome, Minato-ku, Tokyo, Japan
- 代理人： 이철
- 优先权： JPJP-P-2014-175330 2014-08-29
- 国际申请： PCT/JP2015/063824 2015-05-13
- 国际公布： WO2016031310 2016-03-03
- 主分类号： H01L21/304
- IPC分类号： H01L21/304 ; H01L21/306
And a first polishing step for, while supplying the coarse polishing abrasive liquid (224) for the polishing surface of the polishing cloth 223 for coarse grinding, polishing the surface of the wafer (W), subsequent to the first polishing step, the first after finishing the polishing process by supplying a protective film forming solution 225 containing a water-soluble polymer in the polishing cloth 223 for the coarse grinding, the protective film forming solution 225, the blood (被) polished surface of the wafer (W) contacting, while supplying to said blood protective film forming step of forming a protective film (W1) to the polishing surface and the finish polishing for the polishing solution to the coarse abrasive for the polishing cloth 223, which is different from the finish polishing of the polishing cloth for a surface of, and a second polishing step of polishing the surface to form a protective film of the wafer (W).
公开/授权文献:
- KR1020170038865A 실리콘 웨이퍼의 연마 방법 公开/授权日：2017-04-07
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/302 | .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割 |
| ------------------H01L21/304 | ......机械处理，例如研磨、抛光、切割 |