基本信息:
- 专利标题： 반도체 장치
- 专利标题（英）：Semiconductor device
- 专利标题（中）：半导体器件
- 申请号：KR1020160057678 申请日：2016-05-11
- 公开(公告)号：KR101786738B1 公开(公告)日：2017-10-18
- 发明人： 김태엽 , 우혁 , 김영준 , 박태영 , 조한신 , 최윤철
- 申请人： 현대오트론 주식회사
- 申请人地址： 경기도 성남시 분당구 판교로 ***, *층, *층, *층, *층 (삼평동, 엠텍아이티타워)
- 专利权人： 현대오트론 주식회사
- 当前专利权人： 현대오트론 주식회사
- 当前专利权人地址： 경기도 성남시 분당구 판교로 ***, *층, *층, *층, *층 (삼평동, 엠텍아이티타워)
- 代理人： 특허법인가산
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/423
A semiconductor device is disclosed. The semiconductor device according to an embodiment of the invention the first surface and the second epitaxial layer having a substrate, is formed on the first surface of the substrate a first conductivity type and a second surface facing the first surface, wherein is formed in the epitaxial layer, the base region having a second different conductivity type as the first conductivity type, formed within said base region, in the first source region having the first conductivity type, said base region is spaced apart from the source region and forming, the first channel having a first conductivity type region, is formed between the source region and the channel region includes a barrier region having the second conductivity type.
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
| ------------H01L29/70 | ...双极器件 |
| --------------H01L29/762 | ....电荷转移器件 |
| ----------------H01L29/78 | .....由绝缘栅产生场效应的 |