基本信息:
- 专利标题： 고속 에피택셜 리프트오프와 III-V족 직접 성장용 템플릿을 이용한 반도체 소자의 제조 방법 및 이에 의해 제조된 반도체 소자
- 专利标题（英）：Method for manufacturing semiconductor device using high speed epitaxial lift-off and template for iii-v direct growth and semiconductor device manufactured using the same
- 专利标题（中）：一种使用用于快速外延剥离和III-V族生长的模板和半导体器件制造半导体器件的方法
- 申请号：KR1020150069836 申请日：2015-05-19
- 公开(公告)号：KR101743017B1 公开(公告)日：2017-06-05
- 发明人： 김상현 , 금대명 , 박민수 , 최원준
- 申请人： 한국과학기술연구원
- 申请人地址： 서울특별시 성북구 화랑로**길 * (하월곡동)
- 专利权人： 한국과학기술연구원
- 当前专利权人： 한국과학기술연구원
- 当前专利权人地址： 서울특별시 성북구 화랑로**길 * (하월곡동)
- 代理人： 김영철; 김 순 영
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; H01L21/78 ; H01L21/02
Method of manufacturing a semiconductor device includes a first substrate and providing a template (template) containing the pattern first III-V compound layer disposed on the first substrate; Forming a sacrificial layer by epitaxy (epitaxy) growth method to the pattern of the layer 1 III-V group compound; Forming a first III-V compound layer 2 by epitaxial growth method on the sacrificial layer; The method comprising bonding a second substrate made of silicon on the second layer 2, III-V group compound; And a step of separating the second III-V compound layer and the second substrate from the template by removing the sacrificial layer. Since the other III-V from a Group III-V compound layer pattern of the template compound layer directly prepared in the growth method, the Group III-V compound and is the removal defect between different substrate, the growth method of a semiconductor device having a large area direct can be produced, it is possible to reduce the problems of the wafer (wafer) or the limited size increases the cost.
公开/授权文献:
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/20 | ....半导体材料在基片上的沉积，例如外延生长 |
| ----------------H01L21/205 | .....应用气态化合物的还原或分解产生固态凝结物的，即化学沉积 |