基本信息:
- 专利标题： 증착 반응기를 위한 방법 및 장치
- 专利标题（英）：Methods and apparatus for deposition reactors
- 专利标题（中）：沉积反应器的方法和装置
- 申请号：KR1020107029306 申请日：2009-05-25
- 公开(公告)号：KR101642331B1 公开(公告)日：2016-07-29
- 发明人： 린드포르스스벤
- 申请人： 피코순 오와이
- 申请人地址： Tietotie *, FI-***** Espoo, Finland
- 专利权人： 피코순 오와이
- 当前专利权人： 피코순 오와이
- 当前专利权人地址： Tietotie *, FI-***** Espoo, Finland
- 代理人： 리앤목특허법인
- 优先权： US12/154,879 2008-05-27
- 国际申请： PCT/FI2009/050432 2009-05-25
- 国际公布： WO2009144371 2009-12-03
- 主分类号： C30B25/14
- IPC分类号： C30B25/14 ; C23C16/44 ; C23C16/455 ; C30B25/00
摘要：
본발명은전구체증기(101)가증착반응기의반응챔버(110)로적어도하나의인피드라인(141, 142)을따라가이드되고, 반응챔버내에서전구체증기의수직유동을일으키고수직하게놓인기판(170)들사이에서수직하게전구체증기가유입되게하여수직하게놓인기판(170)들의배치의표면상에물질이증착되는방법및 장치에대한것이다.
摘要（英）：
The invention precursor vapor 101, the substrate is placed vertically and the guide along the at least one infeed line (141, 142) into the reaction chamber 110 of the deposition reactor, causing a vertical flow of precursor vapor in the reaction chamber ( 170) to be perpendicular to the precursor vapor is introduced between to a method and apparatus in which the substance is deposited on the surface of the arrangement of the substrate 170 is placed vertically.
公开/授权文献:
- KR1020110031431A 증착 반응기를 위한 방법 및 장치 公开/授权日：2011-03-28