基本信息:
- 专利标题： 양자 전지의 시험용 반도체 프로브, 시험 장치 및 시험 방법
- 专利标题（英）：Semiconductor probe for testing quantum cell, test device, and test method
- 专利标题（中）：用于测试量子电池测试装置和测试方法的半导体探针
- 申请号：KR1020147033618 申请日：2012-05-31
- 公开(公告)号：KR101611942B1 公开(公告)日：2016-04-12
- 发明人： 데와하루타다 , 히와다기요야스 , 나카자와아키라
- 申请人： 가부시키가이샤 니혼 마이크로닉스 , 구엘라 테크놀로지 가부시키가이샤
- 申请人地址： 일본 도쿄도 무사시노시 기치조지혼죠 *-*-*
- 专利权人： 가부시키가이샤 니혼 마이크로닉스,구엘라 테크놀로지 가부시키가이샤
- 当前专利权人： 가부시키가이샤 니혼 마이크로닉스,구엘라 테크놀로지 가부시키가이샤
- 当前专利权人地址： 일본 도쿄도 무사시노시 기치조지혼죠 *-*-*
- 代理人： 유미특허법인
- 国际申请： PCT/JP2012/064232 2012-05-31
- 国际公布： WO2013179471 2013-12-05
- 主分类号： G01R1/067
- IPC分类号： G01R1/067 ; G01R31/36 ; H01L21/66 ; H01M10/48 ; H01M14/00
It provides a method of testing equipment and the test cell by quantum semiconductor probe that is capable of performing electrical characteristics evaluation of the filling layer, without damaging the production process in the middle of both cells. The electrode 54 and the semiconductor probe is configured by laminating a metal oxide semiconductor (56) to the support (52) (50), also to form a probe filling layer 58 of a material, such as both cells, ultraviolet light is irradiated. A semiconductor probe (50), the evaluation is accomplished by forming the probe filling layer 58 of a material, such as both cells, without damaging the filling layer of the two cells. Using a semiconductor probe (50) having the probe filling layer 58, the voltmeter 64 and the current source 62 or the packing layer 18 in, both cells being manufactured by a discharge resistance (66) It provides a test apparatus and a test method for measuring the charge and discharge characteristics.
公开/授权文献:
- KR1020150016290A 양자 전지의 시험용 반도체 프로브, 시험 장치 및 시험 방법 公开/授权日：2015-02-11
信息查询:
EspacenetIPC结构图谱:
| G | 物理 |
| --G01 | 测量；测试 |
| ----G01R | 测量电变量；测量磁变量（通过转换成电变量对任何种类的物理变量进行测量参见G01类名下的 |
| ------G01R1/00 | 包含在G01R5/00至G01R13/00和G01R31/00组中的各类仪器或装置的零部件 |
| --------G01R1/02 | .一般结构零部件 |
| ----------G01R1/06 | ..测量引线；测量探针 |
| ------------G01R1/067 | ...测量探针 |