基本信息:
- 专利标题： 기판 처리 장치, 기판 처리 방법 및 기억 매체
- 专利标题（英）：Substrate processing apparatus, substrate processing method and storage medium
- 申请号：KR1020110018901 申请日：2011-03-03
- 公开(公告)号：KR101506203B1 公开(公告)日：2015-03-26
- 发明人： 다나카히로시 , 햐쿠타케히로노부 , 우노타카시
- 申请人： 도쿄엘렉트론가부시키가이샤
- 申请人地址： *-* Akasaka *-chome, Minato-ku, Tokyo, Japan
- 专利权人： 도쿄엘렉트론가부시키가이샤
- 当前专利权人： 도쿄엘렉트론가부시키가이샤
- 当前专利权人地址： *-* Akasaka *-chome, Minato-ku, Tokyo, Japan
- 代理人： 특허법인엠에이피에스
- 优先权： JPJP-P-2010-052305 2010-03-09; JPJP-P-2010-293024 2010-12-28
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
Reducing the effect of blood on the substrate to be processed while provides good cleaning, the substrate processing apparatus can execute processing such as drying. In the washing tub 221 installed in the substrate processing apparatus (2) by while supplying the cleaning liquid from the cleaning liquid supply section immersing a substrate (W) to the relevant washing liquid in the longitudinal direction state cleaning is performed, the upper area of the washing tub 221 in the drying chamber 21 to be communicated is subjected to drying of the washing tub 221 is raised by dragging the target substrate (W) in the. The first drying gas supply and a second drying gas supply unit from, after the upper end of the post-cleaning the substrate to be processed (W) binary pulled upwardly from the liquid level of the cleaning liquid, in a region where at least the target substrate is exposed, the cleaning claim that does not contain a region from the upper tank from atmosphere the first drying gas and the solvent vapor containing a vapor of the solvent for the removal of liquid in the drying chamber 2 to the drying gas is supplied alternately.
公开/授权文献:
- KR1020110102180A 기판 처리 장치, 기판 처리 방법 및 기억 매체 公开/授权日：2011-09-16
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/302 | .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割 |