基本信息:
- 专利标题： 반도체장치 및 반도체 소자
- 专利标题（英）：Semiconductor device and semiconductor element
- 专利标题（中）：半导体器件和半导体元件
- 申请号：KR1020140061526 申请日：2014-05-22
- 公开(公告)号：KR101504164B1 公开(公告)日：2015-03-19
- 发明人： 후세인할리드하산 , 사이토쇼지
- 申请人： 미쓰비시덴키 가부시키가이샤
- 申请人地址： *-*, Marunouchi *-Chome, Chiyoda-ku, Tokyo ***-**** Japan
- 专利权人： 미쓰비시덴키 가부시키가이샤
- 当前专利权人： 미쓰비시덴키 가부시키가이샤
- 当前专利权人地址： *-*, Marunouchi *-Chome, Chiyoda-ku, Tokyo ***-**** Japan
- 代理人： 이화익; 김홍두
- 优先权： JPJP-P-2011-106529 2011-05-11
- 主分类号： H03K17/687
- IPC分类号： H03K17/687 ; H01L27/088 ; H01L27/105 ; H01L29/78
The object of the present invention is to provide a semiconductor device and a semiconductor device capable of reducing the switching loss. The semiconductor device according to the invention, having a first gate and a first element portion which is turned on and off by a signal from the first gate control, a has a second gate which is turned on and off by a signal from the second gate control the semiconductor elements having a second element, the first being connected to the first gate and the second gate, when turning on the semiconductor element, and turned on at the same time the parts of the first element portion and the second element, turns off the semiconductor element characterized in that the case having a signal transmitting means for transmitting the signal to the first gate and the second gate by a second delay element than the first element section to be turned off.
公开/授权文献:
- KR1020140079345A 반도체장치 및 반도체 소자 公开/授权日：2014-06-26
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H03 | 基本电子电路 |
| ----H03K | 脉冲技术 |
| ------H03K17/00 | 电子开关或选通，即不通过通断接触的 |
| --------H03K17/51 | .按使用特殊元件区分的 |
| ----------H03K17/56 | ..应用半导体器件作为有源元件的 |
| ------------H03K17/687 | ...应用场效应晶体管的 |