基本信息:
- 专利标题： 액정 표시 장치 제조 방법
- 专利标题（英）：Method of manufacturing liquid crystal display
- 申请号：KR1020140134242 申请日：2014-10-06
- 公开(公告)号：KR101496204B1 公开(公告)日：2015-02-26
- 发明人： 이제훈 , 김도현
- 申请人： 삼성디스플레이 주식회사
- 申请人地址： 경기 용인시 기흥구 삼성로*(농서동)
- 专利权人： 삼성디스플레이 주식회사
- 当前专利权人： 삼성디스플레이 주식회사
- 当前专利权人地址： 경기 용인시 기흥구 삼성로*(농서동)
- 代理人： 특허법인가산
- 主分类号： G02F1/136
- IPC分类号： G02F1/136
A high transmittance in the liquid crystal display device manufacturing method and to implement a high-speed driving is provided. A liquid crystal display device manufacturing method, comprising: forming a gate electrode on an insulating substrate; Forming a gate insulating film on the gate electrode; Forming an oxide semiconductor layer on the gate insulating film; Forming an etching stop film on the channel region of the oxide semiconductor layer; Forming a gate insulating film, the oxide semiconductor layer and the lower wiring layer and an upper wiring layer on the etch barrier layer; The lower wiring layer and a step of etching and a common electrode to the upper wiring layer consisting of the lower wiring layer, forming a source electrode and a drain electrode made of the lower wiring and the upper wiring layer; The forming of the etch barrier layer, the common electrode, the source electrode and the protective film on the drain electrode; And comprising the step of forming a pixel electrode connected with the drain electrode on the protective film, the source electrode and the drain electrode may be extended and spaced apart from each other on the upper stop the etch film to the upper part of the oxide semiconductor layer.
公开/授权文献:
- KR1020140131490A 액정 표시 장치 제조 방법 公开/授权日：2014-11-13