基本信息:
- 专利标题： RF 차폐를 수행하는 장치 및 방법
- 专利标题（英）：Rf isolation switch circuit
- 专利标题（中）：射频隔离开关电路
- 申请号：KR1020137005160 申请日：2011-07-26
- 公开(公告)号：KR101487112B1 公开(公告)日：2015-01-28
- 发明人： 얀홍얀 , 산카라나라야난자나키람가네쉬 , 아수리부샨샨티 , 카트리히만슈 , 파니카트비노드브이
- 申请人： 퀄컴 인코포레이티드
- 申请人地址： **** Morehouse Drive, San Diego, CA *****-****, USA
- 专利权人： 퀄컴 인코포레이티드
- 当前专利权人： 퀄컴 인코포레이티드
- 当前专利权人地址： **** Morehouse Drive, San Diego, CA *****-****, USA
- 代理人： 특허법인코리아나
- 优先权： US12/883,940 2010-09-16; US61/368,579 2010-07-28
- 国际申请： PCT/US2011/045427 2011-07-26
- 国际公布： WO2012015849 2012-02-02
- 主分类号： H03K17/06
- IPC分类号： H03K17/06 ; H03K17/16 ; H03H11/32 ; H04B1/48
In a first aspect, RF switches the main transistor and the gate-source and a short circuit. If the RF switch is turned off, the gate-source short-circuit is turned on and thereby short-circuit of the main transistor with the source and the gate, thereby preventing the occurrence Vgs which may cause leakage of the main transistor. When the RF switch turned on, the gate-source short circuit is turned off to disconnect the source from the gate. A main transistor gate turns on when supplied with a digital logic high voltage. And in the second aspect, RF switch comprises a main transistor having a bulk terminal. When the RF switch is turned off, the bulk is connected to ground via a high resistance. When the RF switch turned on, the source and the bulk is shorted together, thereby reducing the threshold voltage of the main transistor.
公开/授权文献:
- KR1020130041991A RF 차폐를 수행하는 장치 및 방법 公开/授权日：2013-04-25
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H03 | 基本电子电路 |
| ----H03K | 脉冲技术 |
| ------H03K17/00 | 电子开关或选通，即不通过通断接触的 |
| --------H03K17/06 | .保证全导通状态的改进 |