基本信息:
- 专利标题： 연마 패드
- 专利标题（英）：Polishing pad
- 申请号：KR1020107015876 申请日：2009-02-26
- 公开(公告)号：KR101455218B1 公开(公告)日：2014-10-31
- 发明人： 히로세준지 , 후쿠다다케시
- 申请人： 도요 고무 고교 가부시키가이샤
- 申请人地址： *-*-** Fujinoki, Itami-shi, Hyogo, Japan
- 专利权人： 도요 고무 고교 가부시키가이샤
- 当前专利权人： 도요 고무 고교 가부시키가이샤
- 当前专利权人地址： *-*-** Fujinoki, Itami-shi, Hyogo, Japan
- 代理人： 유미특허법인
- 优先权： JPJP-P-2008-063034 2008-03-12
- 国际申请： PCT/JP2009/053481 2009-02-26
- 国际公布： WO2009113399 2009-09-17
- 主分类号： H01L21/304
- IPC分类号： H01L21/304 ; C08G18/65
Object of the present invention is to provide a polishing pad with excellent stability, polishing rate and excellent durability. The present invention, in the polishing pad is a polishing layer mounted on the substrate layer, the polishing layer is made of a thermosetting polyurethane foam comprising a substantially open-cell of the rectangle having an opening, wherein the thermosetting polyurethane foams, containing an isocyanate component and an active hydrogen group-containing compound as a raw material component, the isocyanate component is diphenylmethane diisocyanate and / or containing the modified product at least 90% by weight, and the active hydrogen group-containing compounds, polycaprolactone 60-98% by weight of a polyol, isocyanate group-containing functional group number of 15 to 40% by weight of the reaction of compound 3, and an isocyanate group concentration is 10 to 15% by weight to the total amount of the isocyanate component with the active hydrogen group-containing compound, the abrasive layer, and the absolute value of the rate of change of the compression ratio a dry and wet state of the compression ratio B [{(BA) / a} × 100] of the polishing pad according to claim 100 or less.
公开/授权文献:
- KR1020100131419A 연마 패드 公开/授权日：2010-12-15
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/302 | .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割 |
| ------------------H01L21/304 | ......机械处理，例如研磨、抛光、切割 |