基本信息:
- 专利标题: 이온주입 포토레지스트 스트립핑을 위한 스핀온 제제 및 방법
- 专利标题(英):(spin-on formulation and method for an ion implanted photoresist)
- 专利标题(中):(用于离子植入光电子体的旋转配方和方法)
- 申请号:KR1020127010618 申请日:2010-12-03
- 公开(公告)号:KR101454979B1 公开(公告)日:2014-10-27
- 发明人: 코자스테,마흐무드 , 토티르,조지,가브리엘 , 아프잘리-아다카니,알리 , 누네스,로널드,웨인
- 申请人: 인터내셔널 비지네스 머신즈 코포레이션
- 申请人地址: New Orchard Road, Armonk, New York *****, U.S.A.
- 专利权人: 인터내셔널 비지네스 머신즈 코포레이션
- 当前专利权人: 인터내셔널 비지네스 머신즈 코포레이션
- 当前专利权人地址: New Orchard Road, Armonk, New York *****, U.S.A.
- 代理人: 허정훈
- 优先权: US12/643,454 2009-12-21
- 国际申请: PCT/EP2010/068813 2010-12-03
- 国际公布: WO2011080023 2011-07-07
- 主分类号: H01L21/311
- IPC分类号: H01L21/311 ; G03F7/42
Ion-implanted photoresist removal to useful spin-on agents (spin-on formulation) to provide, and the spin-on formulation is at least one or more acidic functional groups (acidic functional group) for containing a water-soluble polymer (water soluble polymer) in water ( aqueous solution), and at least one lanthanide metal (lanthanide metal) - comprises a containing oxidant. The spin-on formulation is applied and baked to form an ion implanted photoresist changed photoresist. The altered photoresist is soluble in the water-soluble, acid or organic solvent. Therefore, all photoresist residues with one of the solvents may be the ion-implanted photoresist and can be used to fully strip. The washing step can be changed after the stripping of the photoresist to be performed.
公开/授权文献:
- KR1020120101358A 이온주입 포토레지스트 스트립핑을 위한 스핀온 제제 및 방법 公开/授权日:2012-09-13
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体,如掺杂材料 |
--------------H01L21/26 | ....用波或粒子辐射轰击的 |
----------------H01L21/302 | .....改变半导体材料的表面物理特性或形状的,例如腐蚀、抛光、切割 |
------------------H01L21/3105 | ......后处理 |
--------------------H01L21/311 | .......绝缘层的刻蚀 |