基本信息:
- 专利标题: 그라핀 옥사이드를 이용한 전계효과 트랜지스터 및 그 제조방법
- 专利标题(英):Field Effect Transistor using grapheme oxide thin film and the manufacturing method thereof
- 专利标题(中):场效应晶体管使用氧化铁氧化物薄膜及其制造方法
- 申请号:KR1020120079152 申请日:2012-07-20
- 公开(公告)号:KR101428015B1 公开(公告)日:2014-08-11
- 发明人: 이상욱 , 강태원 , 겐나디파닌
- 申请人: 동국대학교 산학협력단
- 申请人地址: 서울특별시 중구 필동로*길 ** (필동*가, 동국대학교)
- 专利权人: 동국대학교 산학협력단
- 当前专利权人: 동국대학교 산학협력단
- 当前专利权人地址: 서울특별시 중구 필동로*길 ** (필동*가, 동국대학교)
- 代理人: 특허법인충현
- 优先权: KR1020110073292 2011-07-22
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L29/78
The invention the reduction process, a rough graphene gate electrode formed on the substrate, the substrate relates to a field effect transistor including an oxide, a dielectric layer formed on the gate electrode, a source electrode and a drain electrode formed on the dielectric layer, and source and drain as the channel layer connecting the electrodes, it characterized in that it comprises a reduction process, a rough graphene oxide, onto an FET using a conventional silicon material solid substrate only production is possible, but the present invention is capable of features fabricated on the flexible substrate have. In particular, the reduced graphene oxide is used as the channel layer to be well dispersed in water because it is possible to manufacture a suspension can be manufactured using a thin film printing method.
公开/授权文献:
- KR1020130011966A 그라핀 옥사이드를 이용한 전계효과 트랜지스터 및 그 제조방법 公开/授权日:2013-01-30
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体,如掺杂材料 |
--------------H01L21/26 | ....用波或粒子辐射轰击的 |
----------------H01L21/335 | .....场效应晶体管 |
------------------H01L21/336 | ......带有绝缘栅的 |