基本信息:
- 专利标题： 진보된 리소그래피 프로세스를 위한 세정 노즐
- 专利标题（英）：A cleaning nozzle for advanced lithography process
- 专利标题（中）：用于高级光刻工艺的清洁喷嘴
- 申请号：KR1020120025579 申请日：2012-03-13
- 公开(公告)号：KR101399561B1 公开(公告)日：2014-05-27
- 发明人： 양칭-하이 , 리상-셍
- 申请人： 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드
- 申请人地址： No. *, Li-Hsin Road *, Hsinchu Science Park, Hsinchu, Taiwan
- 专利权人： 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드
- 当前专利权人： 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드
- 当前专利权人地址： No. *, Li-Hsin Road *, Hsinchu Science Park, Hsinchu, Taiwan
- 代理人： 신정건; 김태홍
- 优先权： US13/216,310 2011-08-24
- 主分类号： H01L21/027
- IPC分类号： H01L21/027 ; G03F7/20 ; H01L21/02
It discloses an apparatus for manufacturing a semiconductor device. The apparatus includes a lithography tool. The lithography tool has a first distribution nozzle to the developer solution on the wafer; The second nozzle to dispense cleaning liquid to the first nozzle; And to apparatus for manufacturing a semiconductor device including a controller so as to pre-activate the second nozzle according to a predetermined program. Further, it discloses a method for manufacturing a semiconductor device. The method includes using a first nozzle for performing a developing process which comprises distributing the developer solution on the wafer. The method further includes cleaning the first nozzle in the first nozzle and the second nozzle is the sequence and duration of operation is selectively executed in accordance with one of the plurality of programs to each specified recipe, the second nozzle.
公开/授权文献:
- KR1020130023040A 진보된 리소그래피 프로세스를 위한 세정 노즐 公开/授权日：2013-03-07
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |