基本信息:
- 专利标题: 금속박막의 선택적 제거에 의한 패턴형성 방법
- 专利标题(英):Method for forming pattern of metal thin films by selective removal
- 专利标题(中):通过选择性去除形成金属薄膜图案的方法
- 申请号:KR1020120078893 申请日:2012-07-19
- 公开(公告)号:KR101399439B1 公开(公告)日:2014-05-28
- 发明人: 최준혁 , 이응숙 , 이지혜 , 최대근 , 정주연 , 정준호
- 申请人: 한국기계연구원
- 申请人地址: 대전광역시 유성구 가정북로 *** (장동)
- 专利权人: 한국기계연구원
- 当前专利权人: 한국기계연구원
- 当前专利权人地址: 대전광역시 유성구 가정북로 *** (장동)
- 代理人: 조영현; 나승택
- 主分类号: C23C26/00
- IPC分类号: C23C26/00 ; B82B3/00
The present invention relates to a pattern formation method according to the selective removal of the metal thin film which can achieve a variety of expected effects by selectively removing a region to be removed from the metal thin film patterning process of the substrate, a deposition step of depositing a metal thin film layer on the substrate, the substrate and the region of at least a part of the bonding force is not pressed by the protruding pattern stamp having a projection pattern projected to increase in the pressing step, the metal thin film layer that presses in contact with the metal thin film layer between the metal thin film layer selectively to be removed characterized in that a pattern formation step of forming a pattern.
公开/授权文献:
- KR1020140012331A 금속박막의 선택적 제거에 의한 패턴형성 방법 公开/授权日:2014-02-03