基本信息:
- 专利标题： 주사 전자 현미경 및 시료 관찰 방법
- 专利标题（英）：Scanning electron microscope and sample observation method
- 专利标题（中）：扫描电子显微镜和样品观察方法
- 申请号：KR1020127029072 申请日：2011-04-20
- 公开(公告)号：KR101386290B1 公开(公告)日：2014-04-17
- 发明人： 다까다,사또시 , 스즈끼,나오마사 , 반,나오마 , 가또,다쯔이찌
- 申请人： 가부시키가이샤 히다치 하이테크놀로지즈
- 申请人地址： **-**, NISHISHINBASHI *-CHOME, MINATO-KU, TOKYO JAPAN
- 专利权人： 가부시키가이샤 히다치 하이테크놀로지즈
- 当前专利权人： 가부시키가이샤 히다치 하이테크놀로지즈
- 当前专利权人地址： **-**, NISHISHINBASHI *-CHOME, MINATO-KU, TOKYO JAPAN
- 代理人： 장수길; 박충범; 이중희
- 优先权： JPJP-P-2010-106084 2010-05-06; JPJP-P-2011-002650 2011-01-11
- 国际申请： PCT/JP2011/002300 2011-04-20
- 国际公布： WO2011138853 2011-11-10
- 主分类号： H01J37/28
- IPC分类号： H01J37/28 ; H01J37/22 ; H01J37/147
A scanning electron microscope of the present invention, when performing the pre-charge of the sample 110, would of the incident electron beams from a plurality of the incident direction 403, 404 relative to the sample, a plurality of rings of a pre-charge area irradiated concentric shape divided into the feature region (807, 813), characterized in that the scanning of the electron beam with respect to the respective ring-shaped area. Thereby, the secondary electrons is lost in the contact hole wall surface is reduced because it is possible to obtain information of the contact hole bottom, the pre-charge during the observation haejyeoseo is charged in the contact hole unevenness by the slope of the electron beam it is difficult to be a problem to resolve in It became.
公开/授权文献:
- KR1020130018853A 주사 전자 현미경 및 시료 관찰 방법 公开/授权日：2013-02-25