基本信息:
- 专利标题： 다공성 판상 탄화규소 세라믹스의 제조방법
- 专利标题（英）：Fabrication method of porous sic platelet ceramics
- 专利标题（中）：多孔硅片陶瓷的制造方法
- 申请号：KR1020120096459 申请日：2012-08-31
- 公开(公告)号：KR101350542B1 公开(公告)日：2014-01-14
- 发明人： 이재형 , 정인철 , 박성택
- 申请人： 영남대학교 산학협력단
- 申请人地址： 경상북도 경산시 대학로 *** (대동)
- 专利权人： 영남대학교 산학협력단
- 当前专利权人： 영남대학교 산학협력단
- 当前专利权人地址： 경상북도 경산시 대학로 *** (대동)
- 代理人： 특허법인태백
- 主分类号： C04B35/565
- IPC分类号： C04B35/565 ; C04B35/573
摘要：
The present invention relates to a manufacturing method for porous plate shape silicon carbide ceramics and, more specifically, to a manufacturing method for porous plate shape silicon carbide ceramics in which pore size is controlled by performing heat treatment at a temperature of more than 2250°C with alpha silicon carbide powders and a small amount of boron or aluminum additives without beta silicon carbide powders. The present invention is able to reduce manufacturing costs since high-priced fine beta silicon carbide powders are not used as compared to existing method, lowers impurity contents since precursors are not used and is able to manufacture porous plate shape silicon carbide ceramics with uniform microstructure by using alpha silicon carbide powders with an average particle diameter of more than 1 μm as raw materials. The porous plate shape silicon carbide ceramics according to the present invention exhibit physical properties such as high heat conductivity, intensity, gas permeability and the like.
摘要（中）：
本发明涉及一种多孔板状碳化硅陶瓷的制造方法，更具体地说，涉及通过在大于2250℃的温度下进行热处理来控制孔径的多孔板状碳化硅陶瓷的制造方法 用α碳化硅粉末和少量硼或铝添加剂，不含β碳化硅粉末。 本发明能够降低制造成本，因为与现有方法相比，高价格的β型碳化硅粉末不被使用，因为不使用前体而降低杂质含量，并且能够制造均匀微观结构的多孔板状碳化硅陶瓷 使用平均粒径大于1μm的α碳化硅粉末作为原料。 根据本发明的多孔板状碳化硅陶瓷具有高的导热性，强度，透气性等物理性质。