基本信息:
- 专利标题： 3차원 집적회로 장치 및 그의 제조 방법
- 专利标题（英）：3d ic method and device
- 申请号：KR1020137014574 申请日：2006-08-07
- 公开(公告)号：KR101346127B1 公开(公告)日：2013-12-31
- 发明人： 엔퀴스트폴엠 , 파운틴가이우스,길먼,주니어. , 통,킨위
- 申请人： 집트로닉스 인코퍼레이티드
- 申请人地址： *** Perimeter Park Drive, Suite ***, Morrisville, NC *****
- 专利权人： 집트로닉스 인코퍼레이티드
- 当前专利权人： 집트로닉스 인코퍼레이티드
- 当前专利权人地址： *** Perimeter Park Drive, Suite ***, Morrisville, NC *****
- 代理人： 특허법인 웰
- 优先权： US11/201,321 2005-08-11
- 国际申请： PCT/US2006/030703 2006-08-07
- 国际公布： WO2007021639 2007-02-22
- 主分类号： H01L23/12
- IPC分类号： H01L23/12 ; H01L21/4763
The individual cut die to methods of integration of the device in three dimensions, such as the wafer or, having individual cutting die or a device connected to each other as an integrated structure of the wafer is disclosed. Each or both of the die and the wafer is formed with a semiconductor device. Claim that the first element having a first contact structure is bonded to a second element having a second contact structure. First and second contact structures may be formed of a metallic material selected from tungsten, nickel, gold or their alloys. The vias can be formed that is exposed to at least the first contact structure to the device 1 and can be formed in the via such that the conductive material connecting at least the first contact structure. Bonding the first element and the second element to be directly connected to one of the first contact structure and a first contact structure and the conductive material on the second contact structure. The first and the second heating element to a temperature of less than 400 ℃ can increase the pressure between the first and second contact structures.
公开/授权文献:
- KR1020130086365A 3차원 집적회로 장치 및 그의 제조 방법 公开/授权日：2013-08-01
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L23/00 | 半导体或其他固态器件的零部件 |
| --------H01L23/12 | .安装架，例如不可拆卸的绝缘衬底 |