基本信息:
- 专利标题： 메모리 소자 및 반도체 장치
- 专利标题（英）：Memory element and semiconductor device
- 专利标题（中）：存储元件和半导体器件
- 申请号：KR1020087024783 申请日：2007-02-28
- 公开(公告)号：KR101316558B1 公开(公告)日：2013-10-15
- 发明人： 유카와미키오 , 수기사와노조무
- 申请人： 가부시키가이샤 한도오따이 에네루기 켄큐쇼
- 申请人地址： 일본국 가나가와켄 아쓰기시 하세 ***
- 专利权人： 가부시키가이샤 한도오따이 에네루기 켄큐쇼
- 当前专利权人： 가부시키가이샤 한도오따이 에네루기 켄큐쇼
- 当前专利权人地址： 일본국 가나가와켄 아쓰기시 하세 ***
- 代理人： 장훈
- 优先权： JPJP-P-2006-066527 2006-03-10
- 国际申请： PCT/JP2007/054485 2007-02-28
- 国际公布： WO2007105575 2007-09-20
- 主分类号： H01L27/10
- IPC分类号： H01L27/10 ; H01L29/786 ; H01L51/05
메모리 소자, 메모리 장치, 유기 화합물층, 도전층, 접촉, 편차.
An object of the present invention is to reduce the variations in the behavior of the memory device. Further, another object of the present invention is to obtain a semiconductor device that is equipped with a memory device superior in performance and reliability. Memory device of the present invention includes a first conductive layer on the configuration; Semiconductor layer; The organic compound; And a second conductivity of a layer, wherein the semiconductor layer and the organic compound layer is interposed between the first conductive layer and said second conductive layer, the semiconductor layer of the first conductive layer and / or the second conductive It is formed in contact with the floor. With this structure, the deviation is reduced in the behavior of their respective memory elements. Memory elements, memory devices, the organic compound layer, the conductive layer, a contact, a deviation.
公开/授权文献:
- KR1020080100851A 메모리 소자 및 반도체 장치 公开/授权日：2008-11-19
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L27/00 | 由在一个共用衬底内或其上形成的多个半导体或其他固态组件组成的器件 |
| --------H01L27/02 | .包括有专门适用于整流、振荡、放大或切换的半导体组件并且至少有一个电位跃变势垒或者表面势垒的；包括至少有一个跃变势垒或者表面势垒的无源集成电路单元的 |
| ----------H01L27/04 | ..其衬底为半导体的 |
| ------------H01L27/10 | ...在重复结构中包括有多个独立组件的 |