基本信息:
- 专利标题： 유기 박막 트랜지스터 및 그 형성방법
- 专利标题（英）：Organic thin film transistor and method of forming the same
- 专利标题（中）：有机薄膜晶体管及其形成方法
- 申请号：KR1020100015052 申请日：2010-02-19
- 公开(公告)号：KR101309263B1 公开(公告)日：2013-09-17
- 发明人： 김강대 , 유인규 , 구재본 , 양용석 , 강승열
- 申请人： 한국전자통신연구원
- 申请人地址： 대전광역시 유성구 가정로 *** (가정동)
- 专利权人： 한국전자통신연구원
- 当前专利权人： 한국전자통신연구원
- 当前专利权人地址： 대전광역시 유성구 가정로 *** (가정동)
- 代理人： 권혁수; 오세준; 송윤호
- 主分类号： H01L51/40
- IPC分类号： H01L51/40 ; H01L29/786
The organic thin film transistor and a method are provided. The method for forming the organic thin film transistor is to form a gate electrode on a substrate, covering the gate electrode on a substrate in that the upper recess youngyeokreul having formed the source electrode and the drain electrode in the to form a gate insulating film, recessed area It will, and which comprises forming an organic semiconductor layer in the recess region between the source electrode and the drain electrode, and forming the source electrode, the drain electrode, the organic semiconductor layer and the gate electrode above said source electrode one side in contact with the organic semiconductor layer is aligned with a side of the gate electrode, the drain electrode and one side is in contact with the organic semiconductor layer include those arranged in the other side surface of the gate electrode.
公开/授权文献:
- KR1020110095530A 유기 박막 트랜지스터 및 그 형성방법 公开/授权日：2011-08-25