Samgeuk production method of the field emission device according to the invention is as follows. A cathode on a substrate, an insulating film is formed and a gate metal layer in this order. To form a second resist pattern having a second opening smaller than the size of the first resist pattern and the first opening having a first opening to be laminated in this order on the gate metal layer. Next, form a first and a second gate electrode and an insulating layer having a second hole corresponding to each of the first resist pattern in the first opening by sequentially etching the gate metal layer and the insulating film to the first mask pattern. First to form a catalyst layer on the exposed cathode and the second resist pattern as the second mask pattern through the first and second holes. The first and forms an emitter on the catalyst layer in the second hole after removing the catalyst layer formed on the second resist pattern and the second resist pattern. As such, the first and may be the case of using the second resist pattern, so one can control the pattern of the first hole and the catalyst layer of the gate electrode apart from the mask, improve the production efficiency of the field emission device and improve the field emission properties . Field emission devices, triode, resist, and the gate hole, the catalyst layer