基本信息:
- 专利标题： 투명 전도성 기판에 수직으로 배열된 고집적의 이산화티타늄 나노로드의 제조방법 및 이를 이용한 염료감응 태양전지
- 专利标题（英）：Synthesis of high density, vertically aligned titanium dioxide nanorod on transparent conducting glass substrate and its use in photo-electrode of dye-sensitized solar cells
- 专利标题（中）：在透明导电玻璃基板上合成高密度，垂直排列的二氧化钛纳米棒及其在染料敏化太阳能电池的光电极中的应用
- 申请号：KR1020110074979 申请日：2011-07-28
- 公开(公告)号：KR101274985B1 公开(公告)日：2013-06-17
- 发明人： 김종학 , 박정태 , 고주환 , 안성훈
- 申请人： 연세대학교 산학협력단
- 申请人地址： 서울특별시 서대문구 연세로 ** (신촌동, 연세대학교)
- 专利权人： 연세대학교 산학협력단
- 当前专利权人： 연세대학교 산학협력단
- 当前专利权人地址： 서울특별시 서대문구 연세로 ** (신촌동, 연세대학교)
- 代理人： 특허법인충현
- 主分类号： B82B3/00
- IPC分类号： B82B3/00 ; B82B1/00 ; B82Y40/00
The present invention relates to a method of manufacturing a vertical titanium dioxide nano-rods of the arranged integrated on a transparent conductive substrate, titanium after the precursor solution was coated on a transparent conductive substrate, sintered by a nanorod growth seed layer (seed layer on the transparent conductive substrate ) for forming, polymer is step for preparing a grafted titanium dioxide composite, the polymer is a step for preparing a hydrothermal reaction solution to a grafted titanium dioxide composite as a template, formed is the seed layer in the hot water reacting solution a coarse phase and a transparent conductive substrate by immersing the hot water reacting the hydrothermal reaction step of the transparent conductive substrate sintered at 450-500 ℃; and characterized in that it comprises the, vertically arranged on a transparent conductive substrate according to the invention high-density of titanium dioxide nanorods nano increase the degree of integration of the rod and on the rutile caused by phase change of a phase of anatase dye adsorption amount increases and the one-dimensional structure forming electron recombination phenomenon is reduced dye employing this as an optical electrode due to the sensitized solar cell can be an effective penetration of the electrolyte and is excellent in photoelectric conversion efficiency, improve the long-term stability.
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EspacenetIPC结构图谱:
| B | 作业；运输 |
| --B82 | 超微技术 |
| ----B82B | 超微结构；超微结构的制造或处理 |
| ------B82B3/00 | 超微结构的制造或处理 |