基本信息:
- 专利标题： 양면 연마 장치의 가공층을 트리밍하는 트리밍 방법 및 트리밍 장치
- 专利标题（英）：Method and apparatus for trimming the working layers of a double-side grinding apparatus
- 专利标题（中）：用于调整双面磨床的工作层的方法和装置
- 申请号：KR1020110074148 申请日：2011-07-26
- 公开(公告)号：KR101256310B1 公开(公告)日：2013-04-18
- 发明人： 피취게오르그 , 커슈탄미카엘
- 申请人： 실트로닉 아게
- 申请人地址： Hanns-Seidel-Platz *, ***** Munchen, Germany
- 专利权人： 실트로닉 아게
- 当前专利权人： 실트로닉 아게
- 当前专利权人地址： Hanns-Seidel-Platz *, ***** Munchen, Germany
- 代理人： 신정건; 김태홍
- 优先权： DE10 2010 032 5015 2010-07-28
- 主分类号： H01L21/304
- IPC分类号： H01L21/304
트리밍 본체는 트리밍 디스크 상에서 폭이 정해진 링 형상 영역 내에 배치된다. 트리밍 디스크의 외측 치형부는 트리밍 디스크에 대해 높이 조정 가능하다. 그라인딩 장치에 있는 모든 구동부의 회전 방향은 트리밍 또는 드레싱 동안에 2회 이상 변경된다. 2개의 가공층의 사전에 측정된 형상 프로파일에 따라, 하부 가공층과 상부 가공층으로부터 재료 제거량은 서로 독립적으로 변할 수 있다.
The present invention trimming disk, a plurality of trim main body, using one or more trimming device including the outer tooth, abrasives are combined and of the upper machining disk and the lower machining disk in the grinding apparatus for a double-sided simultaneous treatment of flat workpieces with each other as opposed second method of trimming a single processing layer and the device is applied on the surface, at least one trimming device is added to the outside and a rolling device value by a male part, under a predetermined pressure cooling lubricant that does not contain the material that the grinding operation state are moved between processing disk that rotates to define a cycloidal path for the processed layer to be, trimming the body material from the processing layer by a non-coupled particles and thereby release the abrasive material when in contact with the processing layer trimming method for a processing layer to perform the removal and to a device. A plurality of measures to improve such a method is implemented.
Trimming unit is disposed in the ring-shaped area the width specified on the trimming disks. Height adjustment is possible for the outer toothed portion of the trimming disk, the trimming disk. The direction of rotation of all drive in the grinding device is changed two or more times during trimming or dressing. According to the shape profile measured in advance of the two processing layer, from the lower processing layers and the upper layer material machining removal amount it can be varied independently of each other.
公开/授权文献:
- KR1020120023531A 양면 연마 장치의 가공층을 트리밍하는 트리밍 방법 및 트리밍 장치 公开/授权日：2012-03-13
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/302 | .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割 |
| ------------------H01L21/304 | ......机械处理，例如研磨、抛光、切割 |