基本信息:
- 专利标题： 반도체 장치
- 专利标题（英）：Semiconductor device
- 申请号：KR1020107028065 申请日：2007-09-05
- 公开(公告)号：KR101195408B1 公开(公告)日：2012-10-29
- 发明人： 와다마사히로 , 타나까히로유끼 , 히로세히로시 , 이또테페이 , 타치바나케냐
- 申请人： 스미토모 베이클라이트 가부시키가이샤
- 申请人地址： 일본 도쿄도 시나가와쿠 히가시시나가와 *쵸메 *반 *고
- 专利权人： 스미토모 베이클라이트 가부시키가이샤
- 当前专利权人： 스미토모 베이클라이트 가부시키가이샤
- 当前专利权人地址： 일본 도쿄도 시나가와쿠 히가시시나가와 *쵸메 *반 *고
- 代理人： 장훈; 손영태
- 优先权： JPJP-P-2006-248473 2006-09-13
- 国际申请： PCT/JP2007/067283 2007-09-05
- 国际公布： WO2008032620 2008-03-20
- 主分类号： H01L23/12
- IPC分类号： H01L23/12 ; H01L23/29 ; C08J5/24
The present invention provides a technique of suppressing damage to the semiconductor device due to temperature changes. When a thin layer of core material thickness of the structure to flip-chip mounting a silicon chip on the multilayer board in the field up-type is adopted, coefficient of linear expansion is used for the small core material is a multi-layer substrate, in accordance with the core material thickness and coefficient of linear expansion, the under-filling material linear expansion coefficient and glass transition point are designed appropriately. In this way, to relieve the stress inside the semiconductor package caused by the deformation of the multilayer substrate due to temperature changes, it is possible to suppress damage to the semiconductor package due to temperature changes.
公开/授权文献:
- KR1020110000761A 반도체 장치 公开/授权日：2011-01-05
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L23/00 | 半导体或其他固态器件的零部件 |
| --------H01L23/12 | .安装架，例如不可拆卸的绝缘衬底 |