基本信息:
- 专利标题： 양방향 레벨 시프트 회로를 구비한 파워 소자
- 专利标题（英）：Power device with bi-directional level shift circuit
- 专利标题（中）：具有双向电平转换电路的电源设备
- 申请号：KR1020040098457 申请日：2004-11-29
- 公开(公告)号：KR101193904B1 公开(公告)日：2012-10-29
- 发明人： 오치,삼세이이치로
- 申请人： 익시스 코포레이션
- 申请人地址： **** Buckeye Drive Milpitas, CA *****-****, USA
- 专利权人： 익시스 코포레이션
- 当前专利权人： 익시스 코포레이션
- 当前专利权人地址： **** Buckeye Drive Milpitas, CA *****-****, USA
- 代理人： 특허법인에이아이피; 윤종섭; 이성규; 조진태
- 优先权： US10/726,335 2003-12-01
- 主分类号： H01L29/74
- IPC分类号： H01L29/74
게이트 드라이버, 제어신호 발생기, 부회로(sub-circuit), 비교기(comparator)
The first type has a gate driver comprising a control signal generator arranged to output a gate control signal to the power semiconductor switch is disclosed. The gate control signal generator is provided near gocheuk of the gate driver. A first sub-circuit has a first signal path and second signal path for transmitting signals. First and second signal path are coupled to a first input of the gate control signal generator. The second signal path is arranged to provide a signal to a first input signal to mitigate the delay. The comparator is arranged to receive signals from the gocheuk. This comparator is provided near the gate of the low side driver. A gate driver, the control signal generator, the sub-circuit (sub-circuit), the comparator (comparator)
公开/授权文献:
- KR1020050053001A 양방향 레벨 시프트 회로를 구비한 파워 소자 公开/授权日：2005-06-07
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
| ------------H01L29/70 | ...双极器件 |
| --------------H01L29/74 | ....晶闸管型器件，如具有四区再生作用的 |