基本信息:
- 专利标题： 잉곳성장장치의 베이스챔버
- 专利标题（英）：Base champer for ingot growing apparatus
- 专利标题（中）：用于生长装置的基座
- 申请号：KR1020090116963 申请日：2009-11-30
- 公开(公告)号：KR101190697B1 公开(公告)日：2012-10-12
- 发明人： 박진섭
- 申请人： (주)에스테크
- 申请人地址： 대구광역시 달성군 다사읍 세천로*길 **
- 专利权人： (주)에스테크
- 当前专利权人： (주)에스테크
- 当前专利权人地址： 대구광역시 달성군 다사읍 세천로*길 **
- 代理人： 박정호
- 主分类号： C30B15/20
- IPC分类号： C30B15/20 ; C30B35/00
잉곳성장장치, 베이스챔버, 상부판, 하부판, 황삭, 정삭, 용접, 누수, 수명
The invention tube the upper portion of the ingot growth apparatus (Ingot Growing Apparatus) The configuration base chamber (Base Chamber) by the hole 29 in the top plate 23 of the 21 processing-finishing and then finishing the tube 30 is processed to coupling maintained by insert-type water-tight (水密), and by welding to bond the bottom of the tube 30 in the hole 31 of the lower plate 24 is welded portion is less thermal deformation is reduced by more than half, finishing places significantly decreases even if used for a long time is the possibility of leakage occurring due to corrosion of the welded part of the base chamber of the ingot growth apparatus to be reduced to 50% or less. Ingot growing apparatus, the chamber base, the top plate, bottom plate, roughing, finishing, welding, leakage, life
公开/授权文献:
- KR1020110060388A 잉곳성장장치의 베이스챔버 公开/授权日：2011-06-08