基本信息:
- 专利标题： 연마제, 농축 1액식 연마제, 2액식 연마제 및 기판의 연마 방법
- 专利标题（英）：Polishing agent, concentrated one-pack type polishing agent, two-pack type polishing agent and method for polishing substrate
- 申请号：KR1020117031480 申请日：2010-09-14
- 公开(公告)号：KR101172647B1 公开(公告)日：2012-08-08
- 发明人： 류자키,다이스케 , 나리타,다케노리 , 호시,요우스케 , 이와노,도모히로
- 申请人： 히타치가세이가부시끼가이샤
- 申请人地址： *-*, Marunouchi *-chome, Chiyoda-ku, Tokyo, ***-****, Japan
- 专利权人： 히타치가세이가부시끼가이샤
- 当前专利权人： 히타치가세이가부시끼가이샤
- 当前专利权人地址： *-*, Marunouchi *-chome, Chiyoda-ku, Tokyo, ***-****, Japan
- 代理人： 장수길; 박보현
- 优先权： JPJP-P-2009-243340 2009-10-22; JPJP-P-2009-266571 2009-11-24
- 国际申请： PCT/JP2010/065850 2010-09-14
- 国际公布： WO2011048889 2011-04-28
- 主分类号： C09K3/14
- IPC分类号： C09K3/14 ; H01L21/304 ; B24B37/00
Polishing slurry of the present invention and at least one selected from a tetravalent metal hydroxide particles, and cationized polyvinyl alcohol, an amino sugar, wherein the amino sugar derivatives, polysaccharides, and the group consisting of derivatives of polysaccharides having amino sugar sugars, It contains water. The polishing method of the substrate of the present invention in a pressure pressing the silicon oxide film 1, the silicon oxide film (polishing layer) 1 is formed of the silicon substrate 2 to a polishing pad of a polishing platen state, of the present invention while supplying a polishing slurry between a silicon oxide film 1 and the polishing pad comprises the step of grinding the substrate (2) and moving relative to the silicon oxide film to the polishing table (1).
公开/授权文献:
- KR1020120024881A 연마제, 농축 1액식 연마제, 2액식 연마제 및 기판의 연마 방법 公开/授权日：2012-03-14
信息查询:
EspacenetIPC结构图谱:
| C | 化学；冶金 |
| --C09 | 染料；涂料；抛光剂；天然树脂；黏合剂；其他类目不包含的组合物；其他类目不包含的材料的应用 |
| ----C09K | 不包含在其他类目中的各种应用材料；不包含在其他类目中的材料的各种应用 |
| ------C09K3/00 | 不包含在其他类目中的材料 |
| --------C09K3/14 | .防滑材料；研磨材料 |