基本信息:
- 专利标题： 리드선이 개량된 다이오드 패키지 및 그 제조방법
- 专利标题（英）：Diode package of which the lead wire is improved and method for fabricating the same
- 专利标题（中）：改进引线的二极管封装及其制造方法
- 申请号：KR1020100058818 申请日：2010-06-21
- 公开(公告)号：KR101101018B1 公开(公告)日：2011-12-29
- 发明人： 김재구
- 申请人： 김재구
- 申请人地址： 서울특별시 중랑구 동일로***길 **-* (상봉동)
- 专利权人： 김재구
- 当前专利权人： 김재구
- 当前专利权人地址： 서울특별시 중랑구 동일로***길 **-* (상봉동)
- 代理人： 박지호
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L33/62
摘要：
PURPOSE: A diode package of which the lead wire is improved and a method for fabricating the same is provided to increase heat radiation by forming an upper lead line and a lower lead line into a flat shape. CONSTITUTION: In a diode package of which the lead wire is improved and a method for fabricating the same, an upper part lead line(130) and a bottom lead line(140) are formed into a flat sheet. The first bottom of the upper part lead line is attached to the top side of a diode chip(110). A combination hole(131) is penetrated through in the second step of the upper lead line. The first top side of the lower lead line is attached to the bottom of the diode chip. A combination hole(141) is penetrated through in the second step of the upper lead line.
摘要（中）：
目的：提供引线改进的二极管封装及其制造方法，以通过将上导线和下导线形成为扁平形状来增加热辐射。 构成：在引线改进的二极管封装及其制造方法中，上部引线（130）和底引线（140）形成为平板。 上部引线的第一个底部连接到二极管芯片（110）的顶侧。 在上引线的第二步骤中，穿透组合孔（131）。 下引线的第一顶侧连接到二极管芯片的底部。 在上引线的第二步骤中，穿透组合孔（141）。
公开/授权文献:
- KR1020110138749A 리드선이 개량된 다이오드 패키지 및 그 제조방법 公开/授权日：2011-12-28
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L23/00 | 半导体或其他固态器件的零部件 |
| --------H01L23/48 | .用于向或自处于工作中的固态物体通电的装置，例如引线、接线端装置 |