基本信息:
- 专利标题： 다중-도트 플래쉬 메모리 및 그 제조 방법
- 专利标题（英）：Multi-dot flash memory and method of manufacturing the same
- 专利标题（中）：多点闪存及其制造方法
- 申请号：KR1020100016751 申请日：2010-02-24
- 公开(公告)号：KR101099956B1 公开(公告)日：2011-12-28
- 发明人： 이찌까와다까시 , 와따나베히로시 , 가와바따겐지
- 申请人： 가부시끼가이샤 도시바
- 申请人地址： 일본국 도꾜도 미나또꾸 시바우라 *쪼메 *방 *고
- 专利权人： 가부시끼가이샤 도시바
- 当前专利权人： 가부시끼가이샤 도시바
- 当前专利权人地址： 일본국 도꾜도 미나또꾸 시바우라 *쪼메 *방 *고
- 代理人： 장수길; 박충범; 이중희
- 优先权： JPJP-P-2009-042548 2009-02-25
- 主分类号： H01L27/115
- IPC分类号： H01L27/115 ; H01L21/8247 ; G11C16/00
Multi-dot flash memory active areas arranged in the first direction - the active areas extend in the second direction intersecting the first direction, the direction of the first and second are also parallel to the surface of the semiconductor substrate, , said first floating gates arranged in a direction-gate floating are provided in the upper portion of the active region - the word line provided in the top of the floating gate - that the word lines are laid out in the first direction, and wherein bit lines provided between the floating gate comprises - the bit lines that extend in the second direction. Each of the floating gate has a two side surfaces in the first direction, the second shape of the two side surfaces are different, and the shapes of the facing surfaces of the floating gate in to the adjacent to each other in the first direction is symmetrical.
公开/授权文献:
- KR1020100097065A 다중-도트 플래쉬 메모리 및 그 제조 방법 公开/授权日：2010-09-02
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L27/00 | 由在一个共用衬底内或其上形成的多个半导体或其他固态组件组成的器件 |
| --------H01L27/02 | .包括有专门适用于整流、振荡、放大或切换的半导体组件并且至少有一个电位跃变势垒或者表面势垒的；包括至少有一个跃变势垒或者表面势垒的无源集成电路单元的 |
| ----------H01L27/04 | ..其衬底为半导体的 |
| ------------H01L27/06 | ...在非重复结构中包括有多个单个组件的 |
| --------------H01L27/105 | ....包含场效应组件的 |
| ----------------H01L27/112 | .....只读存储器结构的 |
| ------------------H01L27/115 | ......电动编程只读存储器 |