基本信息:
- 专利标题： 메모리 셀들, 메모리 셀들을 형성하는 방법들, 및 프로그래밍된 메모리 셀들을 형성하는 방법들
- 专利标题（英）：Memory cells, methods of forming memory cells, and methods of forming programmed memory cells
- 专利标题（中）：记忆细胞，形成记忆细胞的方法和形成程序性记忆细胞的方法
- 申请号：KR1020107019730 申请日：2009-01-15
- 公开(公告)号：KR101094048B1 公开(公告)日：2011-12-19
- 发明人： 리우,준
- 申请人： 마이크론 테크놀로지, 인크.
- 申请人地址： **** South Federal Way, Boise, ID, U.S.A.
- 专利权人： 마이크론 테크놀로지, 인크.
- 当前专利权人： 마이크론 테크놀로지, 인크.
- 当前专利权人地址： **** South Federal Way, Boise, ID, U.S.A.
- 代理人： 양영준; 백만기
- 优先权： US12/026,702 2008-02-06
- 国际申请： PCT/US2009/031058 2009-01-15
- 国际公布： WO2009099732 2009-08-13
- 主分类号： H01L27/115
- IPC分类号： H01L27/115 ; H01L21/8247 ; H01L27/10
In some embodiments, the memory cells are transistor gate spaced from a channel region by a gate dielectric; A source region on one side of the channel region; And a drain region on opposite sides of the channel region from the source region. The channel region has a phase change material adjacent the drain region. In some embodiments, the phase change material may be adjacent to both the source region and the drain region. Some embodiments include a method for programming a memory cell having a phase change material adjacent the drain region. An inversion layer is formed in the channel region adjacent to the gate dielectric, the inversion layer is within the pinch phase change material adjacent the drain region has an off region. The pinch-off region within the hot-carriers (e.g., electrons) are used, thereby changing the phase in the phase change material.
公开/授权文献:
- KR1020100107073A 메모리 셀들, 메모리 셀들을 형성하는 방법들, 및 프로그래밍된 메모리 셀들을 형성하는 방법들 公开/授权日：2010-10-04
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L27/00 | 由在一个共用衬底内或其上形成的多个半导体或其他固态组件组成的器件 |
| --------H01L27/02 | .包括有专门适用于整流、振荡、放大或切换的半导体组件并且至少有一个电位跃变势垒或者表面势垒的；包括至少有一个跃变势垒或者表面势垒的无源集成电路单元的 |
| ----------H01L27/04 | ..其衬底为半导体的 |
| ------------H01L27/06 | ...在非重复结构中包括有多个单个组件的 |
| --------------H01L27/105 | ....包含场效应组件的 |
| ----------------H01L27/112 | .....只读存储器结构的 |
| ------------------H01L27/115 | ......电动编程只读存储器 |