基本信息:
- 专利标题： 나노임프린트를 이용한 패턴 형성방법
- 专利标题（英）：Method of forming patterns using nanoimprint
- 专利标题（中）：使用纳米压印的图案形成方法
- 申请号：KR1020100026302 申请日：2010-03-24
- 公开(公告)号：KR101088359B1 公开(公告)日：2011-12-01
- 发明人： 박형호 , 정준호 , 최대근 , 김기돈 , 최준혁 , 이지혜 , 이응숙 , 전소희 , 박성제 , 이순원 , 김사라
- 申请人： 한국기계연구원
- 申请人地址： 대전광역시 유성구 가정북로 *** (장동)
- 专利权人： 한국기계연구원
- 当前专利权人： 한국기계연구원
- 当前专利权人地址： 대전광역시 유성구 가정북로 *** (장동)
- 代理人： 조영현; 나승택
- 主分类号： H01L21/027
- IPC分类号： H01L21/027
본 발명에 따르면, 광 추출 효율이 극대화된 나노 패턴을 형성할 수 있고, 금속 산화물 이외에 정밀하고 미세한 패턴 형성이 요구되는 재질로 패턴을 형성할 수 있으며, 아울러, 나노막대의 정밀한 정렬 및 밀도 조절이 용이하게 수행될 수 있다.
The present invention relates to a pattern forming method using the nano-imprint, the pattern formation method using the nano-imprint according to the first embodiment of the invention, on a substrate, the possible decomposition by at least one of the energy ray or heat to the metal elements the organic ligand metal made by combining steps of coating an organic material precursor composition; The mold coated metal-organic precursor in the step for pressing the composition object-to-image; By imprinting the pattern onto the composition using at least one method of heating or energy ray irradiation to form the metal oxide thin film pattern on the substrate; And a step for etching by the front surface of the metal oxide thin film pattern on a dry-etching, by being etched with the substrate of a portion corresponding to the recess (凹 部) of the metal oxide thin film pattern by the etching step, the metal-oxide the concave-convex pattern consisting of the corresponding cross-sectional shape in the thickness direction of the thin film pattern is characterized in that formed in the substrate itself.
According to the present invention, it is possible to form the light extraction efficiency maximized nano-pattern can be precisely than a metal oxide to form a pattern of a material which requires a fine pattern formation, as well, a precise alignment and density regulation of the nanorods It can be easily performed.
公开/授权文献:
- KR1020110107120A 나노임프린트를 이용한 패턴 형성방법 公开/授权日：2011-09-30
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |