基本信息:
- 专利标题： 반도체 장치와 그 제조방법 및 반도체 제조장치
- 专利标题（英）：Semiconductor device, and method and apparatus for manufacturing semiconductor device
- 专利标题（中）：半导体装置以及半导体装置的制造方法和装置
- 申请号：KR1020037008510 申请日：2001-03-21
- 公开(公告)号：KR100751451B1 公开(公告)日：2007-08-23
- 发明人： 교고쿠토시히코 , 고즈타다시 , 모치즈키키요하루 , 이시즈아키오 , 고바야시요시히코 , 사토수수무 , 기쿠치사카에 , 마루야마마사시 , 고지로이와미치
- 申请人： 가부시키가이샤 히타치세이사쿠쇼 , 가부시키가이샤 아키타덴시시스테무즈 , 가부시끼가이샤 히가시 닛본 세미콘덕터 테크놀로지스
- 申请人地址： *-*, Marunouchi *-chome, Chiyoda-ku, Tokyo, Japan
- 专利权人： 가부시키가이샤 히타치세이사쿠쇼,가부시키가이샤 아키타덴시시스테무즈,가부시끼가이샤 히가시 닛본 세미콘덕터 테크놀로지스
- 当前专利权人： 가부시키가이샤 히타치세이사쿠쇼,가부시키가이샤 아키타덴시시스테무즈,가부시끼가이샤 히가시 닛본 세미콘덕터 테크놀로지스
- 当前专利权人地址： *-*, Marunouchi *-chome, Chiyoda-ku, Tokyo, Japan
- 代理人： 특허법인원전
- 优先权： WOPCT/JP2000/09206 2000-12-25
- 国际申请： PCT/JP2001/002224 2001-03-21
- 国际公布： WO2002052589 2002-07-04
- 主分类号： H01L25/04
- IPC分类号： H01L25/04
High-frequency power amplifier has two amplifying systems. Amplification system, and a plurality of amplifier stages in a cascaded configuration, the power supply voltage terminal is a two-terminal, the supply voltage terminal of the one side is connected to the rest of the amplifier stage of the first stage amplifier stage and the amplification system of the other of the amplification system of one , the supply voltage and the other terminal are connected to the rest of the amplification stage of the amplification system of the first stage amplifier stage and one of the amplifying system of the other. Between each of the final amplification stage and the power supply voltage terminal of the amplification system, and the dense copper wire of diameter approximately 0.1㎜ in spiral wound, the direct current resistance is small air-core coil are connected in series. Each amplification system oscillation margin is improved as there is no signal from which the leakage of a front-end amplifier stage in the final amplification stage, the DC resistance of the air-core coil is small. Air-core coil is cheaper to promote low-cost high-frequency power amplifier of the painter. Air-core coil is supplied in a bulk feeder is mounted on the module substrate.
公开/授权文献:
- KR1020040022205A 반도체 장치와 그 제조방법 및 반도체 제조장치 公开/授权日：2004-03-11
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L25/00 | 由多个单个半导体或其他固态器件组成的组装件 |
| --------H01L25/03 | .所有包含在H01L27/00至H01L51/00各组中同一小组内的相同类型的器件，例如整流二极管的组装件 |
| ----------H01L25/04 | ..不具有单独容器的器件 |