基本信息:
- 专利标题： ＣＭＯＳ 공정을 위한 2중금속 게이트 트랜지스터
- 专利标题（英）：Dual metal gate transistors for ???? process
- 专利标题（中）：双金属栅晶体管 处理
- 申请号：KR1020027016950 申请日：2001-05-10
- 公开(公告)号：KR100733736B1 公开(公告)日：2007-07-02
- 发明人： 마두카르수차리타 , 엔구옌비히-옌
- 申请人： 엔엑스피 유에스에이, 인코포레이티드
- 申请人地址： **** William Cannon Drive West, Austin, Texas *****, U.S.A.
- 专利权人： 엔엑스피 유에스에이, 인코포레이티드
- 当前专利权人： 엔엑스피 유에스에이, 인코포레이티드
- 当前专利权人地址： **** William Cannon Drive West, Austin, Texas *****, U.S.A.
- 代理人： 이병호; 이범래
- 优先权： US09/592,448 2000-06-12
- 国际申请： PCT/US2001/015041 2001-05-10
- 国际公布： WO2001097257 2001-12-20
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L21/8234
전이 금속 산화물, 게이트 유전체, 트랜지스터, p-웰, 가전도대, 전도대
The process for forming a second transistor of the first conductivity type of the first transistor 130 and the second conductive type is disclosed in the semiconductor substrate 102. Substrate 102 has a second well (104) of the first conductivity type of the first well 106 and the second conductivity type. The gate dielectric 108 is formed on the wells. Then, the first metal layer 110 is formed on the gate dielectric (108). Then, portions of the first metal layer 110 located on the second well is removed. Then, the first metal is different from the second metal layer 114 is formed on the wells, the gate mask is formed on the second metallic 9114). Subsequently, a metal layer (110, 114) are patterned to leave a second gate on the first gate and the second well 104 on the first well (106). Subsequently, source / drain (138, 142) is formed on the first 130 and second 132, first 106 and second 104-wells to form a transistor. A transition metal oxide, the gate dielectric, transistors, p- well, also for home appliances, the conduction band
公开/授权文献:
- KR1020030058943A ＣＭＯＳ 공정을 위한 2중금속 게이트 트랜지스터 公开/授权日：2003-07-07
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L27/00 | 由在一个共用衬底内或其上形成的多个半导体或其他固态组件组成的器件 |
| --------H01L27/02 | .包括有专门适用于整流、振荡、放大或切换的半导体组件并且至少有一个电位跃变势垒或者表面势垒的；包括至少有一个跃变势垒或者表面势垒的无源集成电路单元的 |
| ----------H01L27/04 | ..其衬底为半导体的 |
| ------------H01L27/06 | ...在非重复结构中包括有多个单个组件的 |
| --------------H01L27/085 | ....只包含场效应的组件 |
| ----------------H01L27/088 | .....有绝缘栅场效应晶体管的组件 |
| ------------------H01L27/092 | ......互补MIS场效应晶体管 |